IRLU3705ZPBF
MOSFET N-CH 55V 42A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLU3705ZPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 42A at 25°C, with a maximum power dissipation of 130W (Tc). The low on-resistance of 8mOhm at 42A and 10V gate-source voltage (Vgs) ensures efficient power transfer. It utilizes Metal Oxide technology and is packaged in an IPAK (TO-251AA) through-hole configuration, suitable for industrial and automotive power switching applications. Key electrical parameters include a gate charge (Qg) of 66 nC at 5V and input capacitance (Ciss) of 2900 pF at 25V. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
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