IRLU3114ZPBF
MOSFET N-CH 40V 42A I-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLU3114ZPBF, offers a 40V drain-source breakdown voltage and a continuous drain current capability of 42A at 25°C (Tc). This device features a low on-resistance of 4.9mOhm maximum at 42A and 10V Vgs, facilitated by a 4.5V to 10V gate drive range. The N-Channel MOSFET technology ensures efficient switching performance, with a typical gate charge of 56nC at 4.5V and input capacitance of 3810pF at 25V. Maximum power dissipation is rated at 140W (Tc). The through-hole IPAK package (TO-251-3 Short Leads, TO-251AA) is suitable for applications in automotive and industrial power control systems. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3810 pF @ 25 V |
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