IRLU3103
MOSFET N-CH 30V 55A I-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET N-Channel Power MOSFET, part number IRLU3103, offers a 30V drain-source voltage (Vdss) and 55A continuous drain current (Id) at 25°C. This through-hole component features a low on-resistance (Rds On) of 19mOhm maximum at 33A and 10V Vgs bias, with a gate charge (Qg) of 50 nC maximum at 4.5V. The device supports a gate-source voltage range of ±16V and operates from -55°C to 175°C. It is housed in a TO-251-3 Short Leads, IPAK package. Applications include automotive, industrial power control, and high-current switching. The maximum power dissipation is 107W.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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