IRLU2905ZPBF
MOSFET N-CH 55V 42A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRLU2905ZPBF is an N-Channel HEXFET® Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 42A at 25°C (Tc), with a maximum power dissipation of 110W (Tc). The low on-resistance of 13.5mOhm (Max) at 36A, 10V is achieved with a gate drive of 4.5V to 10V. Key parameters include a gate charge (Qg) of 35 nC (Max) at 5V and input capacitance (Ciss) of 1570 pF (Max) at 25V. The IRLU2905ZPBF is housed in an IPAK (TO-251AA) through-hole package, suitable for industrial automation, power supplies, and automotive systems. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 36A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 25 V |
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