IRLU2905Z
MOSFET N-CH 55V 42A I-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRLU2905Z is a through-hole N-channel power MOSFET designed for demanding applications. This component offers a continuous drain current capability of 42A (Tc) and a drain-to-source voltage (Vdss) of 55V. Key electrical characteristics include a maximum on-resistance (Rds On) of 13.5mOhm at 36A and 10V, and a gate charge (Qg) of 35 nC at 5V. The device features a maximum power dissipation of 110W (Tc) and operates within a temperature range of -55°C to 175°C. It is packaged in an IPAK (TO-251-3 Short Leads) format, supplied in tubes. This MOSFET is suitable for various industrial sectors requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 36A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 25 V |
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