IRLU2905PBF
MOSFET N-CH 55V 42A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLU2905PBF, offers a 55 V drain-to-source voltage rating and a continuous drain current of 42 A at 25°C (Tc). This through-hole device, packaged in an IPAK (TO-251-3 Short Leads, IPAK, TO-251AA), features a low on-resistance of 27 mOhm at 25 A and 10 V. The gate charge is specified at a maximum of 48 nC at 5 V, with an input capacitance (Ciss) of 1700 pF at 25 V. This robust MOSFET is suitable for applications in industrial power control and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 25A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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