IRLU2705
MOSFET N-CH 55V 28A I-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLU2705, offers a 55V drain-source voltage and a continuous drain current of 28A at 25°C (Tc). This through-hole component features a maximum power dissipation of 68W (Tc) and a low on-resistance of 40mOhm at 17A, 10V. The gate charge is 25 nC at 5V, with input capacitance (Ciss) at 880 pF @ 25V. Designed for efficient switching, it operates across a temperature range of -55°C to 175°C (TJ). The TO-251-3 Short Leads, IPAK package is suitable for applications in industrial and automotive sectors where robust power handling is critical.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V |
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