IRLU2703
MOSFET N-CH 30V 23A I-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IRLU2703, an N-Channel HEXFET® power MOSFET. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 23 A at 25°C. With a low on-resistance (Rds On) of 45 mOhm at 14 A and 10 V, it offers efficient power handling. The gate charge (Qg) is rated at a maximum of 15 nC at 4.5 V, and input capacitance (Ciss) is 450 pF at 25 V. The device is designed for through-hole mounting in an IPAK package (TO-251-3 Short Leads). Operating temperature range is -55°C to 175°C. This MOSFET is well-suited for applications in power management, industrial control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
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