IRLU024ZPBF
MOSFET N-CH 55V 16A I-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLU024ZPBF. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 16A at 25°C (Tc). The Rds(on) is specified at a maximum of 58mOhm at 9.6A and 10V gate drive. With a maximum power dissipation of 35W (Tc), this MOSFET is housed in an IPAK package (TO-251-3 Short Leads) suitable for through-hole mounting. Key electrical characteristics include a typical Gate Charge (Qg) of 9.9 nC at 5V and an input capacitance (Ciss) of 380 pF at 25V. The operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in industrial and automotive applications requiring efficient switching.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 9.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 25 V |
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