IRLU024N
MOSFET N-CH 55V 17A I-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLU024N, is a through-hole device in an IPAK package (TO-251-3 Short Leads). This component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 17A at 25°C (Tc). With a maximum on-resistance (Rds On) of 65mOhm at 10A and 10V, it offers efficient switching characteristics. The IRLU024N has a gate charge (Qg) of 15nC at 5V and an input capacitance (Ciss) of 480pF at 25V. This MOSFET is designed for applications requiring robust power handling, including industrial automation and power supply designs. It operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 45W (Tc).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
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