IRLU014N
MOSFET N-CH 55V 10A I-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLU014N, features a 55V drain-source voltage and a continuous drain current of 10A at 25°C (Tc). This through-hole component is housed in a TO-251-3 Short Leads, IPAK package. With a maximum power dissipation of 28W (Tc) and a low on-resistance of 140mOhm at 6A and 10V, it is suitable for applications requiring efficient power switching. The IRLU014N is designed for industrial and automotive applications. Key parameters include a gate charge of 7.9 nC at 5V and an input capacitance of 265 pF at 25V. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 265 pF @ 25 V |
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