IRLSL4030PBF
MOSFET N-CH 100V 180A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLSL4030PBF, is designed for high-performance applications requiring efficient power switching. This device features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 180A at 25°C (Tc), with a maximum power dissipation of 370W (Tc). The low on-resistance of 4.3mOhm at 110A and 10V gate-source voltage (Vgs) minimizes conduction losses. Key parameters include a gate charge (Qg) of 130 nC at 4.5V Vgs and an input capacitance (Ciss) of 11360 pF at 50V Vds. The IRLSL4030PBF utilizes TO-262-3 Long Leads (I2PAK) packaging for through-hole mounting, operating across a temperature range of -55°C to 175°C. This component is suitable for use in industrial automation, power supplies, and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 110A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11360 pF @ 50 V |
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