IRLSL3036PBF
MOSFET N-CH 60V 195A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLSL3036PBF is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 195A at 25°C (Tc), with a maximum power dissipation of 380W (Tc). The low on-resistance of 2.4mOhm at 165A and 10V gate-source voltage (Vgs) minimizes conduction losses.
With a gate charge (Qg) of 140 nC at 4.5V and an input capacitance (Ciss) of 11210 pF at 50V, this MOSFET offers efficient switching characteristics. It supports a wide gate drive voltage range from 4.5V to 10V, with a maximum Vgs of ±16V. The threshold voltage (Vgs(th)) is rated at 2.5V at 250µA.
Packaged in a TO-262-3 Long Leads (I2PAK) format suitable for through-hole mounting, the IRLSL3036PBF operates within an extended temperature range of -55°C to 175°C (TJ). This device is utilized in industries such as automotive, industrial power control, and power supply design.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 165A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11210 pF @ 50 V |
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