IRLS4030TRL7PP
MOSFET N-CH 100V 190A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRLS4030TRL7PP is an N-Channel Power MOSFET designed for high-current applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current capability of 190A at 25°C (Tc). With a low on-resistance (Rds On) of 3.9mOhm maximum at 110A and 10V, it minimizes conduction losses. The device is housed in a D2PAK (TO-263-7) surface-mount package, enabling efficient thermal management with a maximum power dissipation of 370W (Tc). Key parameters include a gate charge (Qg) of 140 nC at 4.5V and input capacitance (Ciss) of 11490 pF at 50V. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is suitable for use in demanding applications across industries such as automotive, industrial power control, and electric vehicle powertrains. The component is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 190A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 110A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11490 pF @ 50 V |
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