IRLS3813TRLPBF
MOSFET N-CH 30V 160A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLS3813TRLPBF is an N-Channel Power MOSFET designed for high-current applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 160A at 25°C (Tc). The extremely low on-resistance of 1.95mOhm at 148A and 10V gate drive voltage, coupled with a maximum power dissipation of 195W (Tc), makes it suitable for demanding power management tasks.
Key electrical parameters include a gate charge (Qg) of 83 nC at 4.5V and input capacitance (Ciss) of 8020 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-263AB (D2PAK) surface-mount package, supplied on tape and reel. This MOSFET technology is widely utilized in automotive, industrial, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.95mOhm @ 148A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 195W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 150µA |
| Supplier Device Package | TO-263AB (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8020 pF @ 25 V |
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