IRLS3813PBF
MOSFET N-CH 30V 160A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLS3813PBF. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current rating of 160A at 25°C (Tc). The low on-resistance is specified as 1.95mOhm maximum at 148A and 10V gate drive. Key parameters include a gate charge (Qg) of 83nC at 4.5V and input capacitance (Ciss) of 8020pF at 25V. Designed for efficient power handling, it offers a maximum power dissipation of 195W (Tc). The component is housed in a TO-263-3, D2PAK (2 Leads + Tab) surface mount package, suitable for demanding applications in automotive and industrial power control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.95mOhm @ 148A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 195W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 150µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8020 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
