IRLS3036TRRPBF
MOSFET N-CH 60V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLS3036TRRPBF is an N-Channel Power MOSFET designed for high-performance applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) capability of 195A at 25°C (Tc). The low on-resistance (Rds(on)) of 2.4mOhm is achieved at a drain current of 165A and a gate-source voltage (Vgs) of 10V, with a gate drive range from 4.5V to 10V. It offers a maximum power dissipation of 380W (Tc) and a gate charge (Qg) of 140 nC at 4.5V. The input capacitance (Ciss) is 11210 pF at 50V. Packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface-mount configuration, this component is suitable for demanding power switching and motor control applications across various industrial sectors including automotive and power supplies. It operates within an ambient temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 165A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11210 pF @ 50 V |
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