IRLS3036PBF
MOSFET N-CH 60V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IRLS3036PBF, a member of the HEXFET® series, is a 60V N-Channel power MOSFET. This device offers a continuous drain current of 195A at 25°C and a maximum power dissipation of 380W, both specified at the case temperature. The low on-resistance of 2.4mOhm is achieved at 165A and a gate-source voltage of 10V. Key parameters include a gate charge of 140 nC at 4.5V and an input capacitance of 11210 pF at 50V. The IRLS3036PBF is designed for surface mounting within a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package, operating across a temperature range of -55°C to 175°C. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 165A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11210 pF @ 50 V |
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