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IRLS3034PBF

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IRLS3034PBF

MOSFET N-CH 40V 195A D2PAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

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The Infineon Technologies HEXFET® MOSFET, part number IRLS3034PBF, is a high-performance N-Channel power MOSFET designed for demanding applications. This device features a 40 V drain-to-source voltage (Vdss) and supports a continuous drain current of 195 A at 25°C (Tc), with a maximum power dissipation of 375 W (Tc). The low on-resistance (Rds On) of 1.7 mOhm at 195 A and 10 V gate-to-source voltage (Vgs) minimizes conduction losses. Key electrical characteristics include a gate charge (Qg) of 162 nC at 4.5 V Vgs and input capacitance (Ciss) of 10315 pF at 25 V Vds. This MOSFET operates within a temperature range of -55°C to 175°C (TJ) and is available in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB surface mount package. It is suitable for high-efficiency power conversion and motor control circuits in automotive and industrial sectors.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C195A (Tc)
Rds On (Max) @ Id, Vgs1.7mOhm @ 195A, 10V
FET Feature-
Power Dissipation (Max)375W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageD2PAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds10315 pF @ 25 V

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