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IRLR9343-701PBF

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IRLR9343-701PBF

MOSFET P-CH 55V 20A IPAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® P-Channel MOSFET, part number IRLR9343-701PBF, features a 55V drain-source voltage and a continuous drain current of 20A at 25°C (Tc). This device offers a maximum power dissipation of 79W (Tc) and a low on-resistance of 105mOhm at 3.4A and 10V Vgs. The IRLR9343-701PBF is designed for surface mounting within a TO-252-4, DPAK (3 Leads + Tab) package, specifically the I-PAK (LF701) variant. It operates across a temperature range of -40°C to 175°C (TJ) and has a gate charge of 47nC at 10V Vgs. Input capacitance (Ciss) is a maximum of 660pF at 50V Vds, with a maximum gate-source voltage of ±20V. This component is suitable for applications in automotive and industrial power management systems.

Additional Information

Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-4, DPAK (3 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs105mOhm @ 3.4A, 10V
FET Feature-
Power Dissipation (Max)79W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageI-PAK (LF701)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds660 pF @ 50 V

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