IRLR8743TRLPBF
MOSFET N-CH 30V 160A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR8743TRLPBF is an N-Channel power MOSFET featuring a 30V drain-to-source breakdown voltage. This component offers a continuous drain current of 160A at 25°C (Tc) and a maximum power dissipation of 135W (Tc). The device exhibits a low on-resistance of 3.1mOhm at 25A and 10V Vgs, with a gate threshold voltage of 2.35V at 100µA. Input capacitance (Ciss) is specified at 4880 pF (max) at 15V, and gate charge (Qg) is 59 nC (max) at 4.5V. The IRLR8743TRLPBF is provided in a TO-252AA (DPAK) surface-mount package, suitable for high-density applications. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial power control, and high-current switching applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 135W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4880 pF @ 15 V |
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