IRLR8721TRPBF
MOSFET N-CH 30V 65A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR8721TRPBF is a 30V N-Channel Power MOSFET designed for high-density power applications. This component features a low Rds(on) of 8.4mOhm at 25A and 10V, facilitating efficient power transfer and reduced thermal losses. With a continuous drain current capability of 65A (Tc) and a maximum power dissipation of 65W (Tc), it is suitable for demanding applications. The device operates over a wide temperature range of -55°C to 175°C and utilizes a TO-252AA (DPAK) surface mount package for robust thermal management and board integration. Key electrical parameters include a gate charge (Qg) of 13 nC at 4.5V, input capacitance (Ciss) of 1030 pF at 15V, and a gate-source threshold voltage (Vgs(th)) of 2.35V at 25µA. This MOSFET is commonly employed in automotive power management, industrial motor control, and power supply designs.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 15 V |
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