IRLR8503TRRPBF
MOSFET N-CH 30V 44A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR8503TRRPBF is an N-channel power MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 44A at 25°C (Tc), with a maximum power dissipation of 62W (Tc). The low on-resistance (Rds On) of 16mOhm at 15A and 10V gate-source voltage (Vgs) is achieved through advanced MOSFET technology. Key parameters include a gate charge (Qg) of 20 nC maximum at 5V Vgs and an input capacitance (Ciss) of 1650 pF maximum at 25V Vds. Operating across a wide temperature range from -55°C to 150°C (TJ), this component is housed in a TO-252AA (DPAK) surface-mount package and supplied on tape and reel. This MOSFET is commonly utilized in automotive, industrial power, and high-efficiency power supply designs.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V |
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