IRLR8503PBF
MOSFET N-CH 30V 44A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR8503PBF is an N-Channel Power MOSFET designed for demanding power management applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 44A at 25°C (Tc), with a maximum power dissipation of 62W (Tc). Its low on-resistance (Rds On) of 16mOhm at 15A and 10V Vgs makes it suitable for high-efficiency switching. The device operates with a gate-source voltage range of ±20V and has a threshold voltage (Vgs(th)) of 3V at 250µA. Key parameters include a gate charge (Qg) of 20 nC maximum at 5V and input capacitance (Ciss) of 1650 pF maximum at 25V. The IRLR8503PBF is housed in a TO-252AA (DPAK) surface-mount package, facilitating integration into compact designs. This MOSFET is utilized across various industries, including automotive and industrial automation, where robust power handling and thermal performance are critical.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V |
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