IRLR8259TRPBF
MOSFET N-CH 25V 57A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLR8259TRPBF. This device features a 25V Drain-Source voltage (Vdss) and a continuous drain current (Id) of 57A at 25°C (Tc), with a maximum power dissipation of 48W (Tc). The Rds On is specified at a maximum of 8.7mOhm at 21A and 10V Vgs. Key parameters include a gate charge (Qg) of 10nC at 4.5V Vgs and input capacitance (Ciss) of 900pF at 13V Vds. The operating temperature range is -55°C to 175°C (TJ). Supplied in a TO-252-3, DPAK (Surface Mount) package, this component is suitable for applications in automotive, industrial power control, and high-efficiency power conversion. The device is delivered on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 13 V |
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