IRLR8256TRPBF
MOSFET N-CH 25V 81A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLR8256TRPBF, offers a 25V drain-source voltage and 81A continuous drain current at 25°C (Tc). This surface-mount device, packaged in a TO-252AA (DPAK), features a maximum on-state resistance of 5.7mOhm at 25A and 10V Vgs. With a gate charge (Qg) of 15 nC at 4.5V and input capacitance (Ciss) of 1470 pF at 13V, it supports efficient switching. The MOSFET is rated for 63W power dissipation (Tc) and operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for applications in automotive, industrial, and power supply sectors, leveraging its high current capability and low on-resistance for demanding power management tasks.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 81A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1470 pF @ 13 V |
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