IRLR8113TRPBF
MOSFET N-CH 30V 94A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR8113TRPBF is a N-channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 94A at 25°C (Tc), with a maximum power dissipation of 89W (Tc). The low on-resistance of 6mOhm is achieved at 15A and 10V Vgs. It offers a gate charge of 32 nC at 4.5V and an input capacitance (Ciss) of 2920 pF at 15V Vds. The IRLR8113TRPBF is provided in a TO-252AA (DPAK) surface-mount package, supplied on tape and reel. Operating temperature ranges from -55°C to 175°C (TJ). This device is suitable for use in automotive, industrial, and power supply applications requiring robust power switching.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 94A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2920 pF @ 15 V |
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