IRLR8113PBF
MOSFET N-CH 30V 94A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRLR8113PBF. This device features 30V drain-source breakdown voltage and a continuous drain current capability of 94A at 25°C (Tc). The low on-resistance of 6mOhm is achieved at 15A drain current and 10V gate-source voltage. Designed for efficient power switching, it offers a maximum power dissipation of 89W (Tc). The gate threshold voltage is specified at 2.25V maximum. The IRLR8113PBF is supplied in a TO-252AA (DPAK) surface mount package, suitable for high-density board designs. Key parameters include a gate charge of 32nC at 4.5V Vgs and input capacitance of 2920pF at 15V Vds. This component is utilized in applications such as automotive power control and industrial power management. The operating temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 94A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2920 pF @ 15 V |
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