IRLR8103VTRR
MOSFET N-CH 30V 91A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR8103VTRR is a 30V N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a low on-resistance of 9mOhm at 15A and 10V Vgs, optimized for minimal conduction losses. With a continuous drain current capability of 91A (Tc) and a maximum power dissipation of 115W (Tc), it is suitable for demanding thermal environments. The device utilizes advanced HEXFET® technology for superior performance and reliability. Key electrical characteristics include a Vgs(th) of 3V (max) at 250µA, a gate charge of 27nC (max) at 5V, and input capacitance of 2672pF (max) at 16V Vds. The IRLR8103VTRR is packaged in a TO-252-3 DPAK surface mount configuration and supplied on tape and reel (TR) for automated assembly. This MOSFET is commonly employed in automotive systems, industrial power supplies, and motor control applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 91A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2672 pF @ 16 V |
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