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IRLR8103VTRPBF

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IRLR8103VTRPBF

MOSFET N-CH 30V 91A DPAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® IRLR8103VTRPBF is an N-Channel power MOSFET optimized for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 91A at 25°C (Tc), with a maximum power dissipation of 115W (Tc). The low on-resistance (Rds(on)) of 9mOhm at 15A and 10V gate-source voltage ensures minimal conduction losses. Designed for surface mounting in the TO-252AA (DPAK) package, it offers excellent thermal performance. Key parameters include a gate charge (Qg) of 27nC (max) at 5V Vgs and input capacitance (Ciss) of 2672pF (max) at 16V Vds, facilitating efficient driver design. This MOSFET is suitable for demanding applications in automotive, industrial power, and consumer electronics power management. The device is supplied on tape and reel (TR).

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C91A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)115W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2672 pF @ 16 V

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