IRLR8103VTRLPBF
MOSFET N-CH 30V 91A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® Series IRLR8103VTRLPBF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 91A at 25°C (Tc), with a maximum power dissipation of 115W (Tc). The device offers a low on-resistance of 9mOhm maximum at 15A and 10V gate-source voltage. It is supplied in a TO-252AA (DPAK) surface mount package and operates over a temperature range of -55°C to 150°C. Key electrical characteristics include a gate charge (Qg) of 27 nC maximum at 5V and input capacitance (Ciss) of 2672 pF maximum at 16V. This MOSFET is suitable for use in automotive, industrial, and power supply segments.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 91A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2672 pF @ 16 V |
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