IRLR8103
MOSFET N-CH 30V 89A D-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLR8103, offers a 30V drain-source voltage rating and a continuous drain current of 89A at 25°C. This device features a low on-resistance of 7mOhm maximum at 15A and 10V Vgs. Designed for surface mounting in the TO-252AA (DPAK) package, it supports a maximum power dissipation of 89W. The gate threshold voltage is specified at 2V minimum, with a maximum gate-source voltage of ±20V. Gate charge is 50nC maximum at 5V Vgs. This component is utilized in automotive and industrial power switching applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 89A (Ta) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA (Min) |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 5 V |
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