IRLR7843TRRPBF
MOSFET N-CH 30V 161A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel MOSFET, part number IRLR7843TRRPBF, features a 30V drain-source breakdown voltage and a continuous drain current rating of 161A at 25°C (Tc). This surface-mount device in a TO-252AA (DPAK) package offers low on-resistance, specified at a maximum of 3.3mOhm at 15A and 10V. The device supports gate drive voltages between 4.5V and 10V, with a typical gate charge (Qg) of 50 nC at 4.5V and input capacitance (Ciss) of 4380 pF at 15V. It is designed for a wide operating temperature range of -55°C to 175°C (TJ) and can dissipate up to 140W (Tc). The IRLR7843TRRPBF is suitable for applications in automotive, industrial power control, and high-current switching systems. The component is supplied on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 161A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4380 pF @ 15 V |
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