IRLR7843TRLPBF
MOSFET N-CH 30V 161A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR7843TRLPBF is a high-performance N-channel power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 161A at 25°C (Tc), with a maximum power dissipation of 140W (Tc). The low on-resistance of 3.3mOhm is achieved at 15A and 10V Vgs, facilitating efficient power transfer. Optimized for surface mounting, it utilizes the TO-252AA (DPAK) package for effective thermal management. Gate charge (Qg) is specified at 50 nC maximum at 4.5V, with input capacitance (Ciss) at 4380 pF maximum at 15V. The operating temperature range spans from -55°C to 175°C (TJ). This MOSFET is suitable for various power management solutions in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 161A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4380 pF @ 15 V |
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