IRLR7843CPBF
MOSFET N-CH 30V 161A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® IRLR7843CPBF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source voltage and a continuous drain current capability of 161A at 25°C (Tc), with a maximum power dissipation of 140W (Tc). The low on-resistance of 3.3mOhm at 15A and 10V (Vgs) ensures minimal conduction losses. The MOSFET is housed in a TO-252AA (DPAK) surface-mount package, facilitating efficient thermal management. Key parameters include a gate charge (Qg) of 50 nC at 4.5V and input capacitance (Ciss) of 4380 pF at 15V. This component is suitable for use in automotive, industrial, and power supply applications. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 161A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4380 pF @ 15 V |
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