IRLR7833TRRPBF
MOSFET N-CH 30V 140A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR7833TRRPBF is a 30V N-channel Power MOSFET in a TO-252AA (DPAK) package. This device offers a continuous drain current of 140A (Tc) at 25°C and a low on-resistance of 4.5mOhm at 15A, 10V. With a gate charge (Qg) of 50 nC at 4.5V and input capacitance (Ciss) of 4010 pF at 15V, it is suitable for demanding power switching applications. The operating temperature range is -55°C to 175°C. This component is commonly utilized in automotive, industrial motor control, and power supply designs where efficient power management is critical. The DPAK package facilitates efficient surface mounting.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4010 pF @ 15 V |
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