IRLR7833TRPBF
MOSFET N-CH 30V 140A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRLR7833TRPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 140A at 25°C (Tc). The low on-resistance of 4.5mOhm at 15A and 10V Vgs, coupled with a gate charge (Qg) of 50nC at 4.5V, ensures efficient switching. It is supplied in a TO-252AA (DPAK) surface mount package, suitable for high-power density designs. The maximum power dissipation is rated at 140W (Tc). Operating across a wide temperature range from -55°C to 175°C (TJ), this MOSFET is utilized in automotive, industrial power control, and high-performance computing sectors. Key electrical parameters include an input capacitance (Ciss) of 4010pF (Max) at 15V Vds and a gate-source voltage (Vgs) tolerance of ±20V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4010 pF @ 15 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
