IRLR7833TRLPBF
MOSFET N-CH 30V 140A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRLR7833TRLPBF is a 30V N-Channel Power MOSFET in a TO-252AA (DPAK) surface mount package. This device features a low on-resistance of 4.5mOhm at 15A and 10V Vgs, facilitating efficient power switching. With a continuous drain current capability of 140A (Tc) and a maximum power dissipation of 140W (Tc), it is suitable for demanding applications. The MOSFET offers a gate charge (Qg) of 50nC at 4.5V and input capacitance (Ciss) of 4010pF at 15V. Operating across a temperature range of -55°C to 175°C, the IRLR7833TRLPBF is utilized in automotive, industrial, and power supply designs where high current handling and low conduction losses are critical. The component is supplied on tape and reel (TR).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4010 pF @ 15 V |
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