IRLR7833TR
MOSFET N-CH 30V 140A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR7833TR is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 140 A at 25°C, with a maximum power dissipation of 140 W (Tc). The IRLR7833TR offers a low on-resistance (Rds On) of 4.5 mOhm at 15 A and 10 V gate drive, achieved with a gate voltage (Vgs) range of 4.5 V to 10 V. Its gate charge (Qg) is a maximum of 50 nC at 4.5 V, and input capacitance (Ciss) is 4010 pF at 15 V.
The MOSFET utilizes a TO-252AA (DPAK) surface mount package, facilitating efficient thermal management and automated assembly. Operating across a wide temperature range of -55°C to 175°C (TJ) and with a ±20 V maximum gate-source voltage, this component is suitable for demanding automotive, industrial, and power supply applications. The device is supplied in tape and reel packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4010 pF @ 15 V |
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