IRLR7833
MOSFET N-CH 30V 140A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR7833 is an N-channel power MOSFET designed for high-current applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 140A at 25°C (Tc), with a maximum power dissipation of 140W (Tc). The Rds(on) is a low 4.5mOhm at 15A and 10V Vgs. It operates with a gate drive voltage range of 4.5V to 10V, and a threshold voltage of 2.3V at 250µA. Key electrical characteristics include a gate charge (Qg) of 50 nC at 4.5V and an input capacitance (Ciss) of 4010 pF at 15V. The IRLR7833 is housed in a TO-252AA (DPAK) surface-mount package, suitable for demanding thermal management. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial, and power supply applications requiring robust switching performance.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4010 pF @ 15 V |
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