IRLR7811WCPBF
MOSFET N-CH 30V 64A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR7811WCPBF is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 64A at 25°C (Tc), with a maximum power dissipation of 71W (Tc). The low on-resistance of 10.5mOhm at 15A and 10V (Vgs) minimizes conduction losses. Key characteristics include a gate charge (Qg) of 31 nC at 4.5V and input capacitance (Ciss) of 2260 pF at 15V (Vds). Operating across a wide temperature range of -55°C to 175°C (TJ), it is packaged in a TO-252-3, DPAK (SC-63) surface-mount configuration. This component is suitable for use in automotive, industrial, and power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260 pF @ 15 V |
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