IRLR7807ZTR
MOSFET N-CH 30V 43A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR7807ZTR is an N-Channel Power MOSFET designed for demanding applications. This surface mount component, housed in a TO-252AA (DPAK) package, offers a continuous drain current of 43A (Tc) at 25°C and a drain-source voltage (Vdss) of 30V. Key performance characteristics include a low on-resistance (Rds On) of 13.8mOhm at 15A, 10V, and a gate charge (Qg) of 11 nC at 4.5V. With a maximum power dissipation of 40W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for power management in automotive and industrial motor control systems. It supports gate drive voltages from 4.5V to 10V.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 15 V |