IRLR7807ZPBF
MOSFET N-CH 30V 43A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRLR7807ZPBF. This device features a 30V drain-source voltage and a continuous drain current of 43A at 25°C (Tc). The low on-resistance of 13.8mOhm at 15A and 10V gate-source voltage makes it suitable for high-current applications. With a gate charge of 11 nC at 4.5V and input capacitance of 780 pF at 15V, this MOSFET offers efficient switching characteristics. It is packaged in a TO-252AA (DPAK) surface mount package, designed for high thermal performance with a maximum power dissipation of 40W (Tc). The operating temperature range is -55°C to 175°C (TJ). This component finds application in automotive, industrial power control, and power supply systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 15 V |
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