IRLR6225TRPBF
MOSFET N-CH 20V 100A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLR6225TRPBF, features a 20V drain-source breakdown voltage and a continuous drain current capability of 100A at 25°C (Tc). This surface mount device, housed in a TO-252AA (DPAK) package, offers a low on-resistance of 4mOhm maximum at 21A and 4.5V Vgs. With a maximum power dissipation of 63W (Tc), it is suitable for demanding applications. Key parameters include a gate charge of 72 nC at 4.5V and input capacitance of 3770 pF at 10V. Operating temperature range is -50°C to 150°C. This component is utilized in automotive and industrial power control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 21A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 1.1V @ 50µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3770 pF @ 10 V |
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