IRLR4343TRRPBF
MOSFET N-CH 55V 26A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLR4343TRRPBF. This surface-mount device features a 55V drain-source breakdown voltage and a continuous drain current capability of 26A at 25°C (Tc). The IRLR4343TRRPBF offers a low on-resistance of 50mOhm maximum at 4.7A and 10V Vgs. Key parameters include a gate charge of 42 nC maximum at 10V Vgs and input capacitance of 740 pF maximum at 50V Vds. This TO-252AA (DPAK) packaged MOSFET is rated for a maximum power dissipation of 79W at 25°C (Tc) and operates across a temperature range of -40°C to 175°C (TJ). Suitable for applications in automotive and industrial power control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 50 V |
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