IRLR4343TRPBF
MOSFET N-CH 55V 26A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel power MOSFET, part number IRLR4343TRPBF, offers a 55V drain-source breakdown voltage and a continuous drain current of 26A at 25°C (Tc). This surface-mount device, housed in a TO-252AA (DPAK) package, features a maximum on-resistance of 50mOhm at 4.7A and 10V Vgs. With a gate charge (Qg) of 42 nC (max) at 10V and input capacitance (Ciss) of 740 pF (max) at 50V, it is suitable for applications requiring efficient switching. The operating temperature range is -40°C to 175°C (TJ). This component is commonly utilized in automotive, industrial, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 50 V |