IRLR4343-701PBF
MOSFET N-CH 55V 26A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR4343-701PBF is a 55V N-Channel Power MOSFET designed for efficient power switching applications. This component features a maximum continuous drain current of 26A at 25°C (Tc) and a maximum power dissipation of 79W (Tc). The low Rds(on) of 50mOhm at 4.7A and 10V gate-source voltage, coupled with a gate charge (Qg) of 42nC at 10V, ensures high switching efficiency. Input capacitance (Ciss) is rated at a maximum of 740pF at 50V. The device is supplied in an I-PAK (LF701) package, also known as TO-252-4, suitable for surface mounting. Operating temperature range is -40°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial motor control, and power supply designs.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-4, DPAK (3 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | I-PAK (LF701) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 50 V |
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