IRLR3915PBF
MOSFET N-CH 55V 30A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLR3915PBF, offers a 55V drain-source voltage and a continuous drain current of 30A at 25°C. This TO-252AA (DPAK) surface-mount device features a low on-resistance of 14mOhm maximum at 30A and 10V gate-source voltage. With a maximum power dissipation of 120W at 25°C (Tc), it is suitable for demanding applications. Key parameters include a gate charge of 92 nC at 10V and input capacitance of 1870 pF at 25V. The operating temperature range is -55°C to 175°C. This component finds application in power switching, motor control, and power supply designs across industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1870 pF @ 25 V |
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