IRLR3802TRPBF
MOSFET N-CH 12V 84A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR3802TRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 12V Vds rating and a continuous drain current capability of 84A at 25°C (Tc), with a maximum power dissipation of 88W (Tc). The low on-resistance (Rds On) of 8.5mOhm at 15A and 4.5V Vgs, coupled with a gate charge of 41nC (Max) at 5V Vgs, facilitates fast switching speeds. The device utilizes advanced MOSFET technology and is housed in a TO-252AA (DPAK) surface-mount package, supplied on tape and reel. Its robust thermal performance and low on-state resistance make it suitable for applications in automotive, industrial power control, and power supply designs. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 1.9V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2490 pF @ 6 V |