IRLR3802TRLPBF
MOSFET N-CH 12V 84A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLR3802TRLPBF, is designed for efficient power switching applications. This device features a 12V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 84A at a case temperature of 25°C, with a maximum power dissipation of 88W (Tc). The low on-resistance of 8.5mOhm at 15A and 4.5V gate-source voltage, coupled with a gate charge (Qg) of 41nC at 5V, ensures high switching efficiency. It utilizes a TO-252AA (DPAK) surface mount package, ideal for automated assembly. Operating across a wide temperature range of -55°C to 175°C, this MOSFET is suitable for demanding industrial, automotive, and consumer electronics power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 1.9V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2490 pF @ 6 V |
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